Spin-orbit engineering in transition metal dichalcogenide alloy monolayers
Gang Wang,
Cedric Robert,
Aslihan Suslu,
Bin Chen,
Sijie Yang,
Sarah Alamdari,
Iann C. Gerber,
Thierry Amand,
Xavier Marie,
Sefaattin Tongay () and
Bernhard Urbaszek ()
Additional contact information
Gang Wang: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Cedric Robert: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Aslihan Suslu: School for Engineering of Matter, Transport and Energy, Arizona State University
Bin Chen: School for Engineering of Matter, Transport and Energy, Arizona State University
Sijie Yang: School for Engineering of Matter, Transport and Energy, Arizona State University
Sarah Alamdari: School for Engineering of Matter, Transport and Energy, Arizona State University
Iann C. Gerber: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Thierry Amand: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Xavier Marie: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Sefaattin Tongay: School for Engineering of Matter, Transport and Energy, Arizona State University
Bernhard Urbaszek: Université de Toulouse, INSA-CNRS-UPS, LPCNO
Nature Communications, 2015, vol. 6, issue 1, 1-7
Abstract:
Abstract Binary transition metal dichalcogenide monolayers share common properties such as a direct optical bandgap, spin-orbit splittings of hundreds of meV, light–matter interaction dominated by robust excitons and coupled spin-valley states. Here we demonstrate spin-orbit-engineering in Mo(1−x)WxSe2 alloy monolayers for optoelectronics and applications based on spin- and valley-control. We probe the impact of the tuning of the conduction band spin-orbit spin-splitting on the bright versus dark exciton population. For MoSe2 monolayers, the photoluminescence intensity decreases as a function of temperature by an order of magnitude (4–300 K), whereas for WSe2 we measure surprisingly an order of magnitude increase. The ternary material shows a trend between these two extreme behaviours. We also show a non-linear increase of the valley polarization as a function of tungsten concentration, where 40% tungsten incorporation is sufficient to achieve valley polarization as high as in binary WSe2.
Date: 2015
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms10110
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DOI: 10.1038/ncomms10110
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