Carrier density modulation in a germanium heterostructure by ferroelectric switching

Patrick Ponath, Kurt Fredrickson, Agham B. Posadas, Yuan Ren, Xiaoyu Wu, Rama K. Vasudevan, M. Baris Okatan, S. Jesse, Toshihiro Aoki, Martha R. McCartney, David J. Smith, Sergei V. Kalinin, Keji Lai and Alexander A. Demkov ()
Additional contact information
Patrick Ponath: The University of Texas at Austin
Kurt Fredrickson: The University of Texas at Austin
Agham B. Posadas: The University of Texas at Austin
Yuan Ren: The University of Texas at Austin
Xiaoyu Wu: The University of Texas at Austin
Rama K. Vasudevan: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
M. Baris Okatan: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
S. Jesse: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Toshihiro Aoki: Center for Solid State Science, Arizona State University
Martha R. McCartney: Arizona State University
David J. Smith: Arizona State University
Sergei V. Kalinin: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Keji Lai: The University of Texas at Austin
Alexander A. Demkov: The University of Texas at Austin

Nature Communications, 2015, vol. 6, issue 1, 1-7

Abstract: Abstract The development of non-volatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching and measurable semiconductor modulation. Here we report a true ferroelectric field effect—carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in epitaxial c-axis-oriented BaTiO3 grown by molecular beam epitaxy. Using the density functional theory, we demonstrate that switching of BaTiO3 polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms BaTiO3 tetragonality and the absence of any low-permittivity interlayer at the interface with Ge. The non-volatile, switchable nature of the single-domain out-of-plane ferroelectric polarization of BaTiO3 is confirmed using piezoelectric force microscopy. The effect of the polarization switching on the conductivity of the underlying Ge is measured using microwave impedance microscopy, clearly demonstrating a ferroelectric field effect.

Date: 2015
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DOI: 10.1038/ncomms7067

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