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Probing the limits of gate-based charge sensing

M. F. Gonzalez-Zalba (), S. Barraud, A. J. Ferguson and A. C. Betz ()
Additional contact information
M. F. Gonzalez-Zalba: Hitachi Cambridge Laboratory
S. Barraud: CEA, LETI, Minatec Campus
A. J. Ferguson: Cavendish Laboratory, University of Cambridge
A. C. Betz: Hitachi Cambridge Laboratory

Nature Communications, 2015, vol. 6, issue 1, 1-8

Abstract: Abstract Quantum computation requires a qubit-specific measurement capability to readout the final state of individual qubits. Promising solid-state architectures use external readout electrometers but these can be replaced by a more compact readout element, an in situ gate sensor. Gate-sensing couples the qubit to a resonant circuit via a gate and probes the qubit’s radiofrequency polarizability. Here we investigate the ultimate performance of such a resonant readout scheme and the noise sources that limit its operation. We find a charge sensitivity of 37 μe Hz−1/2, the best value reported for this technique, using the example of a gate sensor strongly coupled to a double quantum dot at the corner states of a silicon nanowire transistor. We discuss the experimental factors limiting gate detection and highlight ways to optimize its sensitivity. In total, resonant gate-based readout has advantages over external electrometers both in terms of reduction of circuit elements as well as absolute charge sensitivity.

Date: 2015
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DOI: 10.1038/ncomms7084

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