Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations

Gang Hee Han (), Nicholas J. Kybert, Carl H. Naylor, Bum Su Lee, Jinglei Ping, Joo Hee Park, Jisoo Kang, Si Young Lee, Young Hee Lee, Ritesh Agarwal and A. T. Charlie Johnson ()
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Gang Hee Han: University of Pennsylvania
Nicholas J. Kybert: University of Pennsylvania
Carl H. Naylor: University of Pennsylvania
Bum Su Lee: University of Pennsylvania
Jinglei Ping: University of Pennsylvania
Joo Hee Park: University of Pennsylvania
Jisoo Kang: Nano/Bio Interface Center, University of Pennsylvania
Si Young Lee: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University
Young Hee Lee: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University
Ritesh Agarwal: University of Pennsylvania
A. T. Charlie Johnson: University of Pennsylvania

Nature Communications, 2015, vol. 6, issue 1, 1-6

Abstract: Abstract Monolayer transition metal dichalcogenides are materials with an atomic structure complementary to graphene but diverse properties, including direct energy bandgaps, which makes them intriguing candidates for optoelectronic devices. Various approaches have been demonstrated for the growth of molybdenum disulphide (MoS2) on insulating substrates, but to date, growth of isolated crystalline flakes has been demonstrated at random locations only. Here we use patterned seeds of molybdenum source material to grow flakes of MoS2 at predetermined locations with micrometre-scale resolution. MoS2 flakes are predominantly monolayers with high material quality, as confirmed by atomic force microscopy, transmission electron microscopy and Raman and photoluminescence spectroscopy. As the monolayer flakes are isolated at predetermined locations, transistor fabrication requires only a single lithographic step. Device measurements exhibit carrier mobility and on/off ratio that exceed 10 cm2 V−1 s−1 and 106, respectively. The technique provides a path for in-depth physical analysis of monolayer MoS2 and fabrication of MoS2-based integrated circuits.

Date: 2015
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DOI: 10.1038/ncomms7128

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