Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride

Chunlin Chen, Zhongchang Wang (), Takeharu Kato, Naoya Shibata, Takashi Taniguchi and Yuichi Ikuhara ()
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Chunlin Chen: Advanced Institute for Materials Research, Tohoku University
Zhongchang Wang: Advanced Institute for Materials Research, Tohoku University
Takeharu Kato: Nanostructures Research Laboratory, Japan Fine Ceramics Center
Naoya Shibata: Institute of Engineering Innovation, University of Tokyo
Takashi Taniguchi: National Institute for Materials Science
Yuichi Ikuhara: Advanced Institute for Materials Research, Tohoku University

Nature Communications, 2015, vol. 6, issue 1, 1-6

Abstract: Abstract Diamond and cubic boron nitride (c-BN) are the top two hardest materials on the Earth. Clarifying how the two seemingly incompressible materials can actually join represents one of the most challenging issues in materials science. Here we apply the temperature gradient method to grow the c-BN single crystals on diamond and report a successful epitaxial growth. By transmission electron microscopy, we reveal a novel misfit accommodation mechanism for a {111} diamond/c-BN heterointerface, that is, lattice misfit can be accommodated by continuous stacking fault networks, which are connected by periodically arranged hexagonal dislocation loops. The loops are found to comprise six 60° Shockley partial dislocations. Atomically, the carbon in diamond bonds directly to boron in c-BN at the interface, which electronically induces a two-dimensional electron gas and a quasi-1D electrical conductivity. Our findings point to the existence of a novel misfit accommodation mechanism associated with the superhard materials.

Date: 2015
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DOI: 10.1038/ncomms7327

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