Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

Shujie Tang, Haomin Wang (), Hui Shan Wang, Qiujuan Sun, Xiuyun Zhang, Chunxiao Cong, Hong Xie, Xiaoyu Liu, Xiaohao Zhou, Fuqiang Huang, Xiaoshuang Chen, Ting Yu, Feng Ding, Xiaoming Xie () and Mianheng Jiang
Additional contact information
Shujie Tang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Haomin Wang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Hui Shan Wang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Qiujuan Sun: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Xiuyun Zhang: Institute of Textiles and Clothing, Hong Kong Polytechnic University
Chunxiao Cong: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link
Hong Xie: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Xiaoyu Liu: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Xiaohao Zhou: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Fuqiang Huang: CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences
Xiaoshuang Chen: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Ting Yu: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link
Feng Ding: Institute of Textiles and Clothing, Hong Kong Polytechnic University
Xiaoming Xie: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Mianheng Jiang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

Nature Communications, 2015, vol. 6, issue 1, 1-7

Abstract: Abstract The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 μm with a growth rate of ~1 nm min−1 or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 μm min−1, thereby promoting graphene domains up to 20 μm in size to be synthesized via chemical vapour deposition (CVD) on hexagonal boron nitride (h-BN). Hall measurements show that the mobility of the sample reaches 20,000 cm2 V−1 s−1 at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

Date: 2015
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DOI: 10.1038/ncomms7499

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