Single-step deposition of high-mobility graphene at reduced temperatures

D.A. Boyd, W.-H. Lin, C.-C. Hsu, M.L. Teague, C.-C. Chen, Y.-Y. Lo, W.-Y. Chan, W.-B. Su, T.-C. Cheng, C.-S. Chang, C.-I. Wu and N.-C. Yeh ()
Additional contact information
D.A. Boyd: California Institute of Technology
W.-H. Lin: California Institute of Technology
C.-C. Hsu: California Institute of Technology
M.L. Teague: California Institute of Technology
C.-C. Chen: California Institute of Technology
Y.-Y. Lo: Graduate Institute of Photonics and Optoelectronics, National Taiwan University
W.-Y. Chan: Institute of Physics, Academia Sinica, Nankang
W.-B. Su: Institute of Physics, Academia Sinica, Nankang
T.-C. Cheng: Graduate Institute of Photonics and Optoelectronics, National Taiwan University
C.-S. Chang: Institute of Physics, Academia Sinica, Nankang
C.-I. Wu: Graduate Institute of Photonics and Optoelectronics, National Taiwan University
N.-C. Yeh: California Institute of Technology

Nature Communications, 2015, vol. 6, issue 1, 1-8

Abstract: Abstract Current methods of chemical vapour deposition (CVD) of graphene on copper are complicated by multiple processing steps and by high temperatures required in both preparing the copper and inducing subsequent film growth. Here we demonstrate a plasma-enhanced CVD chemistry that enables the entire process to take place in a single step, at reduced temperatures (

Date: 2015
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DOI: 10.1038/ncomms7620

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