Quantum Hall effect on top and bottom surface states of topological insulator (Bi1−xSbx)2Te3 films

R. Yoshimi (), A. Tsukazaki, Y. Kozuka, J. Falson, K.S. Takahashi, J.G. Checkelsky, N. Nagaosa, M. Kawasaki and Y. Tokura
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R. Yoshimi: University of Tokyo
A. Tsukazaki: Institute for Materials Research, Tohoku University
Y. Kozuka: University of Tokyo
J. Falson: University of Tokyo
K.S. Takahashi: RIKEN Center for Emergent Matter Science (CEMS)
J.G. Checkelsky: University of Tokyo
N. Nagaosa: University of Tokyo
M. Kawasaki: University of Tokyo
Y. Tokura: University of Tokyo

Nature Communications, 2015, vol. 6, issue 1, 1-6

Abstract: Abstract The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in (Bi1−xSbx)2Te3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.

Date: 2015
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DOI: 10.1038/ncomms7627

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