Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere

Rostislav A. Doganov, Eoin C. T. O’Farrell, Steven P. Koenig, Yuting Yeo, Angelo Ziletti, Alexandra Carvalho, David K. Campbell, David F. Coker, Kenji Watanabe, Takashi Taniguchi, Antonio H. Castro Neto and Barbaros Özyilmaz ()
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Rostislav A. Doganov: Centre for Advanced 2D Materials, National University of Singapore
Eoin C. T. O’Farrell: Centre for Advanced 2D Materials, National University of Singapore
Steven P. Koenig: Centre for Advanced 2D Materials, National University of Singapore
Yuting Yeo: Centre for Advanced 2D Materials, National University of Singapore
Angelo Ziletti: Boston University
Alexandra Carvalho: Centre for Advanced 2D Materials, National University of Singapore
David K. Campbell: Boston University
David F. Coker: Boston University
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Antonio H. Castro Neto: Centre for Advanced 2D Materials, National University of Singapore
Barbaros Özyilmaz: Centre for Advanced 2D Materials, National University of Singapore

Nature Communications, 2015, vol. 6, issue 1, 1-7

Abstract: Abstract Ultrathin black phosphorus is a two-dimensional semiconductor with a sizeable band gap. Its excellent electronic properties make it attractive for applications in transistor, logic and optoelectronic devices. However, it is also the first widely investigated two-dimensional material to undergo degradation upon exposure to ambient air. Therefore a passivation method is required to study the intrinsic material properties, understand how oxidation affects the physical properties and enable applications of phosphorene. Here we demonstrate that atomically thin graphene and hexagonal boron nitride can be used for passivation of ultrathin black phosphorus. We report that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole transconductance characteristics.

Date: 2015
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DOI: 10.1038/ncomms7647

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