Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces

Takeaki Yajima (), Yasuyuki Hikita, Makoto Minohara, Christopher Bell, Julia A. Mundy, Lena F. Kourkoutis, David A. Muller, Hiroshi Kumigashira, Masaharu Oshima and Harold Y. Hwang ()
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Takeaki Yajima: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Yasuyuki Hikita: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Makoto Minohara: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Christopher Bell: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory
Julia A. Mundy: School of Applied and Engineering Physics, Cornell University
Lena F. Kourkoutis: School of Applied and Engineering Physics, Cornell University
David A. Muller: School of Applied and Engineering Physics, Cornell University
Hiroshi Kumigashira: Photon Factory, High Energy Accelerator Research Organization
Masaharu Oshima: The University of Tokyo
Harold Y. Hwang: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory

Nature Communications, 2015, vol. 6, issue 1, 1-5

Abstract: Abstract The concept ‘the interface is the device’ is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, which is often influenced by interface dipoles. On the other hand, the ability to purposefully create and control interface dipoles is a relatively unexplored degree of freedom for perovskite oxides, which should be particularly effective for such ionic materials. Here we demonstrate tuning the band alignment in perovskite metal-semiconductor heterojunctions over a broad range of 1.7 eV. This is achieved by the insertion of positive or negative charges at the interface, and the resultant dipole formed by the induced screening charge. This approach can be broadly used in applications where decoupling the band alignment from the constituent work functions and electron affinities can enhance device functionality.

Date: 2015
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DOI: 10.1038/ncomms7759

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