Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures

Teng Gao, Xiuju Song, Huiwen Du, Yufeng Nie, Yubin Chen, Qingqing Ji, Jingyu Sun, Yanlian Yang, Yanfeng Zhang () and Zhongfan Liu ()
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Teng Gao: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
Xiuju Song: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
Huiwen Du: National Center for Nanoscience and Technology
Yufeng Nie: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
Yubin Chen: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
Qingqing Ji: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
Jingyu Sun: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
Yanlian Yang: National Center for Nanoscience and Technology
Yanfeng Zhang: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University
Zhongfan Liu: Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low-Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University

Nature Communications, 2015, vol. 6, issue 1, 1-8

Abstract: Abstract In-plane and vertically stacked heterostructures of graphene and hexagonal boron nitride (h-BN-G and G/h-BN, respectively) are both recent focuses of graphene research. However, targeted synthesis of either heterostructure remains a challenge. Here, via chemical vapour deposition and using benzoic acid precursor, we have achieved the selective growth of h-BN-G and G/h-BN through a temperature-triggered switching reaction. The perfect in-plane h-BN-G is characterized by scanning tunnelling microscopy (STM), showing atomically patched graphene and h-BN with typical zigzag edges. In contrast, the vertical alignment of G/h-BN is confirmed by unique lattice-mismatch-induced moiré patterns in high-resolution STM images, and two sets of aligned selected area electron diffraction spots, both suggesting a van der Waals epitaxial mechanism. The present work demonstrates the chemical designability of growth process for controlled synthesis of graphene and h-BN heterostructures. With practical scalability, high uniformity and quality, our approach will promote the development of graphene-based electronics and optoelectronics.

Date: 2015
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DOI: 10.1038/ncomms7835

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