Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors

Erfu Liu, Yajun Fu, Yaojia Wang, Yanqing Feng, Huimei Liu, Xiangang Wan, Wei Zhou, Baigeng Wang (), Lubin Shao, Ching-Hwa Ho, Ying-Sheng Huang, Zhengyi Cao, Laiguo Wang, Aidong Li, Junwen Zeng, Fengqi Song, Xinran Wang, Yi Shi, Hongtao Yuan (), Harold Y. Hwang, Yi Cui, Feng Miao () and Dingyu Xing
Additional contact information
Erfu Liu: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Yajun Fu: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Yaojia Wang: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Yanqing Feng: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Huimei Liu: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Xiangang Wan: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Wei Zhou: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Baigeng Wang: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Lubin Shao: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Ching-Hwa Ho: Graduate School of Applied Science and Technology, National Taiwan University of Science and Technology
Ying-Sheng Huang: National Taiwan University of Science and Technology
Zhengyi Cao: College of Engineering and Applied Sciences, Nanjing University
Laiguo Wang: College of Engineering and Applied Sciences, Nanjing University
Aidong Li: College of Engineering and Applied Sciences, Nanjing University
Junwen Zeng: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Fengqi Song: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Xinran Wang: School of Electronic Science and Engineering, Nanjing University
Yi Shi: School of Electronic Science and Engineering, Nanjing University
Hongtao Yuan: Geballe Laboratory for Advanced Materials, Stanford University
Harold Y. Hwang: Geballe Laboratory for Advanced Materials, Stanford University
Yi Cui: Geballe Laboratory for Advanced Materials, Stanford University
Feng Miao: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Dingyu Xing: National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University

Nature Communications, 2015, vol. 6, issue 1, 1-7

Abstract: Abstract Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS2) flakes with unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated monolayer and few-layer ReS2 field-effect transistors, which exhibit competitive performance with large current on/off ratios (∼107) and low subthreshold swings (100 mV per decade). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known two-dimensional semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic field-effect transistors, suggesting the promising implementation of large-scale two-dimensional logic circuits. Our results underscore the unique properties of two-dimensional semiconducting materials with low crystal symmetry for future electronic applications.

Date: 2015
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DOI: 10.1038/ncomms7991

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