Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Yu-Chuan Lin, Ram Krishna Ghosh, Rafik Addou, Ning Lu, Sarah M. Eichfeld, Hui Zhu, Ming-Yang Li, Xin Peng, Moon J. Kim, Lain-Jong Li, Robert M. Wallace, Suman Datta and Joshua A. Robinson ()
Additional contact information
Yu-Chuan Lin: The Pennsylvania State University
Ram Krishna Ghosh: The Pennsylvania State University
Rafik Addou: The University of Texas at Dallas
Ning Lu: The University of Texas at Dallas
Sarah M. Eichfeld: The Pennsylvania State University
Hui Zhu: The University of Texas at Dallas
Ming-Yang Li: Institute of Atomic and Molecular Sciences, Academia Sinica
Xin Peng: The University of Texas at Dallas
Moon J. Kim: The University of Texas at Dallas
Lain-Jong Li: Physical Science and Engineering, King Abdullah University of Science and Technology
Robert M. Wallace: The University of Texas at Dallas
Suman Datta: The Pennsylvania State University
Joshua A. Robinson: The Pennsylvania State University

Nature Communications, 2015, vol. 6, issue 1, 1-6

Abstract: Abstract Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

Date: 2015
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DOI: 10.1038/ncomms8311

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