Lead iodide perovskite light-emitting field-effect transistor

Xin Yu Chin, Daniele Cortecchia, Jun Yin, Annalisa Bruno and Cesare Soci ()
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Xin Yu Chin: School of Physical and Mathematical Sciences, Nanyang Technological University
Daniele Cortecchia: Interdisciplinary Graduate School, Nanyang Technological University
Jun Yin: School of Physical and Mathematical Sciences, Nanyang Technological University
Annalisa Bruno: School of Physical and Mathematical Sciences, Nanyang Technological University
Cesare Soci: School of Physical and Mathematical Sciences, Nanyang Technological University

Nature Communications, 2015, vol. 6, issue 1, 1-9

Abstract: Abstract Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.

Date: 2015
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DOI: 10.1038/ncomms8383

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