Nanoscale memristive radiofrequency switches

Shuang Pi, Mohammad Ghadiri-Sadrabadi, Joseph C. Bardin and Qiangfei Xia ()
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Shuang Pi: Nanodevices and Integrated Systems Laboratory, University of Massachusetts
Mohammad Ghadiri-Sadrabadi: Radio Frequency Nanoelectronics Group, University of Massachusetts
Joseph C. Bardin: Radio Frequency Nanoelectronics Group, University of Massachusetts
Qiangfei Xia: Nanodevices and Integrated Systems Laboratory, University of Massachusetts

Nature Communications, 2015, vol. 6, issue 1, 1-9

Abstract: Abstract Radiofrequency switches are critical components in wireless communication systems and consumer electronics. Emerging devices include switches based on microelectromechanical systems and phase-change materials. However, these devices suffer from disadvantages such as large physical dimensions and high actuation voltages. Here we propose and demonstrate a nanoscale radiofrequency switch based on a memristive device. The device can be programmed with a voltage as low as 0.4 V and has an ON/OFF conductance ratio up to 1012 with long state retention. We measure the radiofrequency performance of the switch up to 110 GHz and demonstrate low insertion loss (0.3 dB at 40 GHz), high isolation (30 dB at 40 GHz), an average cutoff frequency of 35 THz and competitive linearity and power-handling capability. Our results suggest that, in addition to their application in memory and computing, memristive devices are also a leading contender for radiofrequency switch applications.

Date: 2015
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DOI: 10.1038/ncomms8519

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