Nanoscale control of phonon excitations in graphene
Hyo Won Kim,
Wonhee Ko,
JiYeon Ku,
Insu Jeon,
Donggyu Kim,
Hyeokshin Kwon,
Youngtek Oh,
Seunghwa Ryu,
Young Kuk,
Sung Woo Hwang and
Hwansoo Suh ()
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Hyo Won Kim: Device Lab., Samsung Advanced Institute of Technology
Wonhee Ko: Device Lab., Samsung Advanced Institute of Technology
JiYeon Ku: Device Lab., Samsung Advanced Institute of Technology
Insu Jeon: Device Lab., Samsung Advanced Institute of Technology
Donggyu Kim: Korea Advanced Institute of Science and Technology (KAIST)
Hyeokshin Kwon: Device Lab., Samsung Advanced Institute of Technology
Youngtek Oh: Device Lab., Samsung Advanced Institute of Technology
Seunghwa Ryu: Korea Advanced Institute of Science and Technology (KAIST)
Young Kuk: Seoul National University
Sung Woo Hwang: Device Lab., Samsung Advanced Institute of Technology
Hwansoo Suh: Device Lab., Samsung Advanced Institute of Technology
Nature Communications, 2015, vol. 6, issue 1, 1-5
Abstract:
Abstract Phonons, which are collective excitations in a lattice of atoms or molecules, play a major role in determining various physical properties of condensed matter, such as thermal and electrical conductivities. In particular, phonons in graphene interact strongly with electrons; however, unlike in usual metals, these interactions between phonons and massless Dirac fermions appear to mirror the rather complicated physics of those between light and relativistic electrons. Therefore, a fundamental understanding of the underlying physics through systematic studies of phonon interactions and excitations in graphene is crucial for realising graphene-based devices. In this study, we demonstrate that the local phonon properties of graphene can be controlled at the nanoscale by tuning the interaction strength between graphene and an underlying Pt substrate. Using scanning probe methods, we determine that the reduced interaction due to embedded Ar atoms facilitates electron–phonon excitations, further influencing phonon-assisted inelastic electron tunnelling.
Date: 2015
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DOI: 10.1038/ncomms8528
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