Rapid epitaxy-free graphene synthesis on silicidated polycrystalline platinum

Vitaliy Babenko, Adrian T. Murdock, Antal A. Koós, Jude Britton, Alison Crossley, Philip Holdway, Jonathan Moffat, Jian Huang, Jack A. Alexander-Webber, Robin J. Nicholas and Nicole Grobert ()
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Vitaliy Babenko: University of Oxford
Adrian T. Murdock: University of Oxford
Antal A. Koós: University of Oxford
Jude Britton: University of Oxford
Alison Crossley: University of Oxford
Philip Holdway: University of Oxford
Jonathan Moffat: Oxford Instruments Asylum Research
Jian Huang: University of Oxford
Jack A. Alexander-Webber: University of Oxford
Robin J. Nicholas: University of Oxford
Nicole Grobert: University of Oxford

Nature Communications, 2015, vol. 6, issue 1, 1-8

Abstract: Abstract Large-area synthesis of high-quality graphene by chemical vapour deposition on metallic substrates requires polishing or substrate grain enlargement followed by a lengthy growth period. Here we demonstrate a novel substrate processing method for facile synthesis of mm-sized, single-crystal graphene by coating polycrystalline platinum foils with a silicon-containing film. The film reacts with platinum on heating, resulting in the formation of a liquid platinum silicide layer that screens the platinum lattice and fills topographic defects. This reduces the dependence on the surface properties of the catalytic substrate, improving the crystallinity, uniformity and size of graphene domains. At elevated temperatures growth rates of more than an order of magnitude higher (120 μm min−1) than typically reported are achieved, allowing savings in costs for consumable materials, energy and time. This generic technique paves the way for using a whole new range of eutectic substrates for the large-area synthesis of 2D materials.

Date: 2015
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DOI: 10.1038/ncomms8536

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