Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers

O. M. J. van ’t Erve (), A. L. Friedman, C. H. Li, J. T. Robinson, J. Connell, L. J. Lauhon and B. T. Jonker ()
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O. M. J. van ’t Erve: Naval Research Laboratory
A. L. Friedman: Naval Research Laboratory
C. H. Li: Naval Research Laboratory
J. T. Robinson: Naval Research Laboratory
J. Connell: Northwestern University
L. J. Lauhon: Northwestern University
B. T. Jonker: Naval Research Laboratory

Nature Communications, 2015, vol. 6, issue 1, 1-8

Abstract: Abstract Spin-based devices offer non-volatile, scalable, low power and reprogrammable functionality for emerging device technologies. Here we fabricate nanoscale spintronic devices with ferromagnetic metal/single-layer graphene tunnel barriers used to generate spin accumulation and spin currents in a silicon nanowire transport channel. We report the first observation of spin precession via the Hanle effect in both local three-terminal and non-local spin-valve geometries, providing a direct measure of spin lifetimes and confirmation of spin accumulation and pure spin transport. The use of graphene as the tunnel barrier provides a low-resistance area product contact and clean magnetic switching characteristics, because it smoothly bridges the nanowire and minimizes complicated magnetic domains that otherwise compromise the magnetic behaviour. Utilizing intrinsic two-dimensional layers such as graphene or hexagonal boron nitride as tunnel contacts on nanowires offers many advantages over conventional materials deposited by vapour deposition, enabling a path to highly scaled electronic and spintronic devices.

Date: 2015
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DOI: 10.1038/ncomms8541

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