Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

F. Fuchs, B. Stender, M. Trupke, D. Simin, J. Pflaum, V. Dyakonov () and G. V. Astakhov ()
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F. Fuchs: Experimental Physics VI, Julius-Maximilian University of Würzburg
B. Stender: Experimental Physics VI, Julius-Maximilian University of Würzburg
M. Trupke: Vienna Center for Quantum Science and Technology, Atominstitut, TU Wien
D. Simin: Experimental Physics VI, Julius-Maximilian University of Würzburg
J. Pflaum: Experimental Physics VI, Julius-Maximilian University of Würzburg
V. Dyakonov: Experimental Physics VI, Julius-Maximilian University of Würzburg
G. V. Astakhov: Experimental Physics VI, Julius-Maximilian University of Würzburg

Nature Communications, 2015, vol. 6, issue 1, 1-7

Abstract: Abstract Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.

Date: 2015
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DOI: 10.1038/ncomms8578

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