Quantitative o perando visualization of the energy band depth profile in solar cells

Qi Chen, Lin Mao, Yaowen Li, Tao Kong, Na Wu, Changqi Ma, Sai Bai, Yizheng Jin, Dan Wu, Wei Lu, Bing Wang and Liwei Chen ()
Additional contact information
Qi Chen: i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
Lin Mao: i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
Yaowen Li: i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
Tao Kong: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
Na Wu: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
Changqi Ma: Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
Sai Bai: State Key Laboratory of Silicon Materials, Zhejiang University
Yizheng Jin: State Key Laboratory of Silicon Materials, Zhejiang University
Dan Wu: i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
Wei Lu: i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
Bing Wang: Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China
Liwei Chen: i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences

Nature Communications, 2015, vol. 6, issue 1, 1-9

Abstract: Abstract The energy band alignment in solar cell devices is critically important because it largely governs elementary photovoltaic processes, such as the generation, separation, transport, recombination and collection of charge carriers. Despite the expenditure of considerable effort, the measurement of energy band depth profiles across multiple layers has been extremely challenging, especially for operando devices. Here we present direct visualization of the surface potential depth profile over the cross-sections of operando organic photovoltaic devices using scanning Kelvin probe microscopy. The convolution effect due to finite tip size and cantilever beam crosstalk has previously prohibited quantitative interpretation of scanning Kelvin probe microscopy-measured surface potential depth profiles. We develop a bias voltage-compensation method to address this critical problem and obtain quantitatively accurate measurements of the open-circuit voltage, built-in potential and electrode potential difference.

Date: 2015
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DOI: 10.1038/ncomms8745

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