Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors

Masoud Mahjouri-Samani (), Ming-Wei Lin, Kai Wang, Andrew R. Lupini, Jaekwang Lee, Leonardo Basile, Abdelaziz Boulesbaa, Christopher M. Rouleau, Alexander A. Puretzky, Ilia N. Ivanov, Kai Xiao, Mina Yoon and David B. Geohegan ()
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Masoud Mahjouri-Samani: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Ming-Wei Lin: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Kai Wang: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Andrew R. Lupini: Oak Ridge National Laboratory
Jaekwang Lee: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Leonardo Basile: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Abdelaziz Boulesbaa: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Christopher M. Rouleau: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Alexander A. Puretzky: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Ilia N. Ivanov: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Kai Xiao: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Mina Yoon: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
David B. Geohegan: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory

Nature Communications, 2015, vol. 6, issue 1, 1-6

Abstract: Abstract The formation of semiconductor heterojunctions and their high-density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional crystalline semiconductors as building blocks in next-generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate an approach for the formation of lithographically patterned arrays of lateral semiconducting heterojunctions within a single two-dimensional crystal. Electron beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser vaporization of sulfur to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversion process are studied by Raman and photoluminescence spectroscopy, atomically resolved scanning transmission electron microscopy and device characterization. This demonstration of lateral heterojunction arrays within a monolayer crystal is an essential step for the integration of two-dimensional semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin devices.

Date: 2015
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DOI: 10.1038/ncomms8749

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