High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering

David J. Perello (), Sang Hoon Chae, Seunghyun Song and Young Hee Lee ()
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David J. Perello: IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University
Sang Hoon Chae: IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University
Seunghyun Song: IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University
Young Hee Lee: IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University

Nature Communications, 2015, vol. 6, issue 1, 1-10

Abstract: Abstract Recent work has demonstrated excellent p-type field-effect switching in exfoliated black phosphorus, but type control has remained elusive. Here, we report unipolar n-type black phosphorus transistors with switching polarity control via contact-metal engineering and flake thickness, combined with oxygen and moisture-free fabrication. With aluminium contacts to black phosphorus, a unipolar to ambipolar transition occurs as flake thickness increases from 3 to 13 nm. The 13-nm aluminium-contacted flake displays graphene-like symmetric hole and electron mobilities up to 950 cm2 V−1 s−1 at 300 K, while a 3 nm flake displays unipolar n-type switching with on/off ratios greater than 105 (107) and electron mobility of 275 (630) cm2 V−1 s−1 at 300 K (80 K). For palladium contacts, p-type behaviour dominates in thick flakes, while 2.5–7 nm flakes have symmetric ambipolar transport. These results demonstrate a leap in n-type performance and exemplify the logical switching capabilities of black phosphorus.

Date: 2015
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DOI: 10.1038/ncomms8809

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