Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides

Galan Moody, Chandriker Kavir Dass, Kai Hao, Chang-Hsiao Chen, Lain-Jong Li, Akshay Singh, Kha Tran, Genevieve Clark, Xiaodong Xu, Gunnar Berghäuser, Ermin Malic, Andreas Knorr and Xiaoqin Li ()
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Galan Moody: University of Texas at Austin
Chandriker Kavir Dass: University of Texas at Austin
Kai Hao: University of Texas at Austin
Chang-Hsiao Chen: Feng Chia University
Lain-Jong Li: King Abdullah University of Science & Technology (KAUST)
Akshay Singh: University of Texas at Austin
Kha Tran: University of Texas at Austin
Genevieve Clark: University of Washington
Xiaodong Xu: University of Washington
Gunnar Berghäuser: Institut f. Theoretische Physik, Nitchlineare Optik und Quantenelektronik, Technische Universität Berlin
Ermin Malic: Chalmers University of Technology
Andreas Knorr: Institut f. Theoretische Physik, Nitchlineare Optik und Quantenelektronik, Technische Universität Berlin
Xiaoqin Li: University of Texas at Austin

Nature Communications, 2015, vol. 6, issue 1, 1-6

Abstract: Abstract The band-edge optical response of transition metal dichalcogenides, an emerging class of atomically thin semiconductors, is dominated by tightly bound excitons localized at the corners of the Brillouin zone (valley excitons). A fundamental yet unknown property of valley excitons in these materials is the intrinsic homogeneous linewidth, which reflects irreversible quantum dissipation arising from system (exciton) and bath (vacuum and other quasiparticles) interactions and determines the timescale during which excitons can be coherently manipulated. Here we use optical two-dimensional Fourier transform spectroscopy to measure the exciton homogeneous linewidth in monolayer tungsten diselenide (WSe2). The homogeneous linewidth is found to be nearly two orders of magnitude narrower than the inhomogeneous width at low temperatures. We evaluate quantitatively the role of exciton–exciton and exciton–phonon interactions and population relaxation as linewidth broadening mechanisms. The key insights reported here—strong many-body effects and intrinsically rapid radiative recombination—are expected to be ubiquitous in atomically thin semiconductors.

Date: 2015
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DOI: 10.1038/ncomms9315

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