Extremely large magnetoresistance in few-layer graphene/boron–nitride heterostructures

Kalon Gopinadhan, Young Jun Shin, Rashid Jalil, Thirumalai Venkatesan, Andre K. Geim, Antonio H. Castro Neto and Hyunsoo Yang ()
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Kalon Gopinadhan: Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore
Young Jun Shin: and NUSNNI-Nanocore, National University of Singapore
Rashid Jalil: Centre for Mesoscience and Nanotechnology, University of Manchester
Thirumalai Venkatesan: and NUSNNI-Nanocore, National University of Singapore
Andre K. Geim: Centre for Mesoscience and Nanotechnology, University of Manchester
Antonio H. Castro Neto: Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore
Hyunsoo Yang: Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore

Nature Communications, 2015, vol. 6, issue 1, 1-7

Abstract: Abstract Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of∼2,000% at 400 K and a non-local magnetoresistance of >90,000% in an applied magnetic field of 9 T at 300 K in few-layer graphene/boron–nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen–Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

Date: 2015
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DOI: 10.1038/ncomms9337

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