Wafer-scale growth of VO2 thin films using a combinatorial approach

Hai-Tian Zhang, Lei Zhang, Debangshu Mukherjee, Yuan-Xia Zheng, Ryan C. Haislmaier, Nasim Alem and Roman Engel-Herbert ()
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Hai-Tian Zhang: Pennsylvania State University
Lei Zhang: Pennsylvania State University
Debangshu Mukherjee: Pennsylvania State University
Yuan-Xia Zheng: Pennsylvania State University
Ryan C. Haislmaier: Pennsylvania State University
Nasim Alem: Pennsylvania State University
Roman Engel-Herbert: Pennsylvania State University

Nature Communications, 2015, vol. 6, issue 1, 1-8

Abstract: Abstract Transition metal oxides offer functional properties beyond conventional semiconductors. Bridging the gap between the fundamental research frontier in oxide electronics and their realization in commercial devices demands a wafer-scale growth approach for high-quality transition metal oxide thin films. Such a method requires excellent control over the transition metal valence state to avoid performance deterioration, which has been proved challenging. Here we present a scalable growth approach that enables a precise valence state control. By creating an oxygen activity gradient across the wafer, a continuous valence state library is established to directly identify the optimal growth condition. Single-crystalline VO2 thin films have been grown on wafer scale, exhibiting more than four orders of magnitude change in resistivity across the metal-to-insulator transition. It is demonstrated that ‘electronic grade’ transition metal oxide films can be realized on a large scale using a combinatorial growth approach, which can be extended to other multivalent oxide systems.

Date: 2015
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DOI: 10.1038/ncomms9475

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