Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils

Yang Gao, Zhibo Liu, Dong-Ming Sun, Le Huang, Lai-Peng Ma, Li-Chang Yin, Teng Ma, Zhiyong Zhang, Xiu-Liang Ma, Lian-Mao Peng, Hui-Ming Cheng and Wencai Ren ()
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Yang Gao: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Zhibo Liu: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Dong-Ming Sun: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Le Huang: Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University
Lai-Peng Ma: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Li-Chang Yin: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Teng Ma: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Zhiyong Zhang: Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University
Xiu-Liang Ma: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Lian-Mao Peng: Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University
Hui-Ming Cheng: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences
Wencai Ren: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences

Nature Communications, 2015, vol. 6, issue 1, 1-10

Abstract: Abstract Large-area monolayer WS2 is a desirable material for applications in next-generation electronics and optoelectronics. However, the chemical vapour deposition (CVD) with rigid and inert substrates for large-area sample growth suffers from a non-uniform number of layers, small domain size and many defects, and is not compatible with the fabrication process of flexible devices. Here we report the self-limited catalytic surface growth of uniform monolayer WS2 single crystals of millimetre size and large-area films by ambient-pressure CVD on Au. The weak interaction between the WS2 and Au enables the intact transfer of the monolayers to arbitrary substrates using the electrochemical bubbling method without sacrificing Au. The WS2 shows high crystal quality and optical and electrical properties comparable or superior to mechanically exfoliated samples. We also demonstrate the roll-to-roll/bubbling production of large-area flexible films of uniform monolayer, double-layer WS2 and WS2/graphene heterostructures, and batch fabrication of large-area flexible monolayer WS2 film transistor arrays.

Date: 2015
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DOI: 10.1038/ncomms9569

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