Solution-printed organic semiconductor blends exhibiting transport properties on par with single crystals
Muhammad R. Niazi,
Ruipeng Li,
Er Qiang Li,
Ahmad R. Kirmani,
Maged Abdelsamie,
Qingxiao Wang,
Wenyang Pan,
Marcia M. Payne,
John E. Anthony,
Detlef-M. Smilgies,
Sigurdur T. Thoroddsen,
Emmanuel P. Giannelis and
Aram Amassian ()
Additional contact information
Muhammad R. Niazi: King Abdullah University of Science and Technology
Ruipeng Li: King Abdullah University of Science and Technology
Er Qiang Li: King Abdullah University of Science and Technology
Ahmad R. Kirmani: King Abdullah University of Science and Technology
Maged Abdelsamie: King Abdullah University of Science and Technology
Qingxiao Wang: Advanced Imaging and Characterization Laboratory, King Abdullah University of Science and Technology
Wenyang Pan: Cornell University
Marcia M. Payne: University of Kentucky
John E. Anthony: University of Kentucky
Detlef-M. Smilgies: Cornell High Energy Synchrotron Source, Cornell University
Sigurdur T. Thoroddsen: King Abdullah University of Science and Technology
Emmanuel P. Giannelis: Cornell University
Aram Amassian: King Abdullah University of Science and Technology
Nature Communications, 2015, vol. 6, issue 1, 1-10
Abstract:
Abstract Solution-printed organic semiconductors have emerged in recent years as promising contenders for roll-to-roll manufacturing of electronic and optoelectronic circuits. The stringent performance requirements for organic thin-film transistors (OTFTs) in terms of carrier mobility, switching speed, turn-on voltage and uniformity over large areas require performance currently achieved by organic single-crystal devices, but these suffer from scale-up challenges. Here we present a new method based on blade coating of a blend of conjugated small molecules and amorphous insulating polymers to produce OTFTs with consistently excellent performance characteristics (carrier mobility as high as 6.7 cm2 V−1 s−1, low threshold voltages of
Date: 2015
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms9598
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DOI: 10.1038/ncomms9598
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