Spectromicroscopic insights for rational design of redox-based memristive devices

Christoph Baeumer (), Christoph Schmitz, Amr H. H. Ramadan, Hongchu Du, Katharina Skaja, Vitaliy Feyer, Philipp Müller, Benedikt Arndt, Chun-Lin Jia, Joachim Mayer, Roger A. De Souza, Claus Michael Schneider, Rainer Waser and Regina Dittmann
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Christoph Baeumer: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Christoph Schmitz: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Amr H. H. Ramadan: Institute of Physical Chemistry, RWTH Aachen University and JARA-FIT
Hongchu Du: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Katharina Skaja: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Vitaliy Feyer: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Philipp Müller: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Benedikt Arndt: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Chun-Lin Jia: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Joachim Mayer: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Roger A. De Souza: Institute of Physical Chemistry, RWTH Aachen University and JARA-FIT
Claus Michael Schneider: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Rainer Waser: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT
Regina Dittmann: Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT

Nature Communications, 2015, vol. 6, issue 1, 1-10

Abstract: Abstract The demand for highly scalable, low-power devices for data storage and logic operations is strongly stimulating research into resistive switching as a novel concept for future non-volatile memory devices. To meet technological requirements, it is imperative to have a set of material design rules based on fundamental material physics, but deriving such rules is proving challenging. Here, we elucidate both switching mechanism and failure mechanism in the valence-change model material SrTiO3, and on this basis we derive a design rule for failure-resistant devices. Spectromicroscopy reveals that the resistance change during device operation and failure is indeed caused by nanoscale oxygen migration resulting in localized valence changes between Ti4+ and Ti3+. While fast reoxidation typically results in retention failure in SrTiO3, local phase separation within the switching filament stabilizes the retention. Mimicking this phase separation by intentionally introducing retention-stabilization layers with slow oxygen transport improves retention times considerably.

Date: 2015
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DOI: 10.1038/ncomms9610

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