Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

Shumao Cui, Haihui Pu, Spencer A. Wells, Zhenhai Wen, Shun Mao, Jingbo Chang, Mark C. Hersam and Junhong Chen ()
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Shumao Cui: University of Wisconsin–Milwaukee
Haihui Pu: University of Wisconsin–Milwaukee
Spencer A. Wells: Northwestern University
Zhenhai Wen: University of Wisconsin–Milwaukee
Shun Mao: University of Wisconsin–Milwaukee
Jingbo Chang: University of Wisconsin–Milwaukee
Mark C. Hersam: Northwestern University
Junhong Chen: University of Wisconsin–Milwaukee

Nature Communications, 2015, vol. 6, issue 1, 1-9

Abstract: Abstract Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is ∼1015 cm−2 for the 4.8-nm-thick PNS when exposed to 20 p.p.b. NO2 at 300 K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets ( 10 nm).

Date: 2015
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DOI: 10.1038/ncomms9632

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