Synthesis of large-area multilayer hexagonal boron nitride for high material performance

Soo Min Kim, Allen Hsu, Min Ho Park, Sang Hoon Chae, Seok Joon Yun, Joo Song Lee, Dae-Hyun Cho, Wenjing Fang, Changgu Lee, Tomás Palacios, Mildred Dresselhaus, Ki Kang Kim (), Young Hee Lee () and Jing Kong ()
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Soo Min Kim: Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST)
Allen Hsu: Massachusetts Institute of Technology
Min Ho Park: School of Advanced Materials Science and Engineering, Sungkyunkwan University
Sang Hoon Chae: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University
Seok Joon Yun: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University
Joo Song Lee: Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST)
Dae-Hyun Cho: The Ohio State University
Wenjing Fang: Massachusetts Institute of Technology
Changgu Lee: School of Mechanical Engineering, Sungkyunkwan University
Tomás Palacios: Massachusetts Institute of Technology
Mildred Dresselhaus: Massachusetts Institute of Technology
Ki Kang Kim: Dongguk University-Seoul
Young Hee Lee: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University
Jing Kong: Massachusetts Institute of Technology

Nature Communications, 2015, vol. 6, issue 1, 1-11

Abstract: Abstract Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young’s modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼24,000 cm2 V−1 s−1 at room temperature, higher than that (∼13,000 2 V−1 s−1) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.

Date: 2015
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DOI: 10.1038/ncomms9662

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