Radio frequency measurements of tunnel couplings and singlet–triplet spin states in Si:P quantum dots

M. G. House (), T. Kobayashi, B. Weber, S. J. Hile, T. F. Watson, J. van der Heijden, S. Rogge and M. Y. Simmons ()
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M. G. House: Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales
T. Kobayashi: Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales
B. Weber: Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales
S. J. Hile: Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales
T. F. Watson: Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales
J. van der Heijden: Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales
S. Rogge: Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales
M. Y. Simmons: Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales

Nature Communications, 2015, vol. 6, issue 1, 1-6

Abstract: Abstract Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Designing a scalable donor-based quantum computer will require both knowledge of the relationship between device geometry and electron tunnel couplings, and a spin readout strategy that uses minimal physical space in the device. Here we use radio frequency reflectometry to measure singlet–triplet states of a few-donor Si:P double quantum dot and demonstrate that the exchange energy can be tuned by at least two orders of magnitude, from 20 μeV to 8 meV. We measure dot–lead tunnel rates by analysis of the reflected signal and show that they change from 100 MHz to 22 GHz as the number of electrons on a quantum dot is increased from 1 to 4. These techniques present an approach for characterizing, operating and engineering scalable qubit devices based on donors in silicon.

Date: 2015
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DOI: 10.1038/ncomms9848

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