Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)2Te3

Mao Ye (), Wei Li, Siyuan Zhu, Yukiharu Takeda, Yuji Saitoh, Jiajia Wang, Hong Pan, Munisa Nurmamat, Kazuki Sumida, Fuhao Ji, Zhen Liu, Haifeng Yang, Zhengtai Liu, Dawei Shen, Akio Kimura (), Shan Qiao () and Xiaoming Xie
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Mao Ye: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Wei Li: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Siyuan Zhu: Graduate School of Science, Hiroshima University
Yukiharu Takeda: Quantum Beam Science Center, Japan Atomic Energy Agency
Yuji Saitoh: Quantum Beam Science Center, Japan Atomic Energy Agency
Jiajia Wang: School of physical science and technology, ShanghaiTech University
Hong Pan: State Key Laboratory of Surface Physics, and Laboratory of Advanced Materials, Fudan University
Munisa Nurmamat: Graduate School of Science, Hiroshima University
Kazuki Sumida: Graduate School of Science, Hiroshima University
Fuhao Ji: State Key Laboratory of Surface Physics, and Laboratory of Advanced Materials, Fudan University
Zhen Liu: State Key Laboratory of Surface Physics, and Laboratory of Advanced Materials, Fudan University
Haifeng Yang: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Zhengtai Liu: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Dawei Shen: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Akio Kimura: Graduate School of Science, Hiroshima University
Shan Qiao: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Xiaoming Xie: State Key Laboratoryof Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

Nature Communications, 2015, vol. 6, issue 1, 1-7

Abstract: Abstract Magnetically doped topological insulators, possessing an energy gap created at the Dirac point through time-reversal-symmetry breaking, are predicted to exhibit exotic phenomena including the quantized anomalous Hall effect and a dissipationless transport, which facilitate the development of low-power-consumption devices using electron spins. Although several candidates of magnetically doped topological insulators were demonstrated to show long-range magnetic order, the realization of the quantized anomalous Hall effect is so far restricted to the Cr-doped (Sb,Bi)2Te3 system at extremely low temperature; however, the microscopic origin of its ferromagnetism is poorly understood. Here we present an element-resolved study for Cr-doped (Sb,Bi)2Te3 using X-ray magnetic circular dichroism to unambiguously show that the long-range magnetic order is mediated by the p-hole carriers of the host lattice, and the interaction between the Sb(Te) p and Cr d states is crucial. Our results are important for material engineering in realizing the quantized anomalous Hall effect at higher temperatures.

Date: 2015
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DOI: 10.1038/ncomms9913

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