Logic circuit prototypes for three-terminal magnetic tunnel junctions with mobile domain walls

J. A. Currivan-Incorvia (), S. Siddiqui, S. Dutta, E. R. Evarts, J. Zhang, D. Bono, C. A. Ross and M. A. Baldo ()
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J. A. Currivan-Incorvia: Massachusetts Institute of Technology
S. Siddiqui: Massachusetts Institute of Technology
S. Dutta: Massachusetts Institute of Technology
E. R. Evarts: Physical Measurement Laboratory, National Institute of Standards and Technology
J. Zhang: Massachusetts Institute of Technology
D. Bono: Massachusetts Institute of Technology
C. A. Ross: Massachusetts Institute of Technology
M. A. Baldo: Massachusetts Institute of Technology

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract Spintronic computing promises superior energy efficiency and nonvolatility compared to conventional field-effect transistor logic. But, it has proven difficult to realize spintronic circuits with a versatile, scalable device design that is adaptable to emerging material physics. Here we present prototypes of a logic device that encode information in the position of a magnetic domain wall in a ferromagnetic wire. We show that a single three-terminal device can perform inverter and buffer operations. We demonstrate one device can drive two subsequent gates and logic propagation in a circuit of three inverters. This prototype demonstration shows that magnetic domain wall logic devices have the necessary characteristics for future computing, including nonlinearity, gain, cascadability, and room temperature operation.

Date: 2016
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DOI: 10.1038/ncomms10275

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