Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance

Changjiang Liu, Sahil J. Patel, Timothy A. Peterson, Chad C. Geppert, Kevin D. Christie, Gordon Stecklein, Chris J. Palmstrøm and Paul A. Crowell ()
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Changjiang Liu: School of Physics and Astronomy, University of Minnesota
Sahil J. Patel: University of California
Timothy A. Peterson: School of Physics and Astronomy, University of Minnesota
Chad C. Geppert: School of Physics and Astronomy, University of Minnesota
Kevin D. Christie: School of Physics and Astronomy, University of Minnesota
Gordon Stecklein: School of Physics and Astronomy, University of Minnesota
Chris J. Palmstrøm: University of California
Paul A. Crowell: School of Physics and Astronomy, University of Minnesota

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract A distinguishing feature of spin accumulation in ferromagnet–semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this approach enables a measurement of short spin lifetimes (

Date: 2016
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms10296

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DOI: 10.1038/ncomms10296

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