Wavelength-tunable entangled photons from silicon-integrated III–V quantum dots

Yan Chen, Jiaxiang Zhang, Michael Zopf, Kyubong Jung, Yang Zhang, Robert Keil, Fei Ding () and Oliver G. Schmidt
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Yan Chen: Institute for Integrative Nanosciences, IFW Dresden
Jiaxiang Zhang: Institute for Integrative Nanosciences, IFW Dresden
Michael Zopf: Institute for Integrative Nanosciences, IFW Dresden
Kyubong Jung: Institute for Integrative Nanosciences, IFW Dresden
Yang Zhang: Institute for Integrative Nanosciences, IFW Dresden
Robert Keil: Institute for Integrative Nanosciences, IFW Dresden
Fei Ding: Institute for Integrative Nanosciences, IFW Dresden
Oliver G. Schmidt: Institute for Integrative Nanosciences, IFW Dresden

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract Many of the quantum information applications rely on indistinguishable sources of polarization-entangled photons. Semiconductor quantum dots are among the leading candidates for a deterministic entangled photon source; however, due to their random growth nature, it is impossible to find different quantum dots emitting entangled photons with identical wavelengths. The wavelength tunability has therefore become a fundamental requirement for a number of envisioned applications, for example, nesting different dots via the entanglement swapping and interfacing dots with cavities/atoms. Here we report the generation of wavelength-tunable entangled photons from on-chip integrated InAs/GaAs quantum dots. With a novel anisotropic strain engineering technique based on PMN-PT/silicon micro-electromechanical system, we can recover the quantum dot electronic symmetry at different exciton emission wavelengths. Together with a footprint of several hundred microns, our device facilitates the scalable integration of indistinguishable entangled photon sources on-chip, and therefore removes a major stumbling block to the quantum-dot-based solid-state quantum information platforms.

Date: 2016
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DOI: 10.1038/ncomms10387

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