Correction: Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering

David J. Perello, Sang Hoon Chae, Seunghyun Song and Young Hee Lee

Nature Communications, 2016, vol. 7, issue 1, 1-2

Abstract: Nature Communications 6, Article number: 7809 (2015); Published 30 July 2015; Updated 28 January 2016 In Fig. 3 of this article, there are a number of errors in the colours used for the data points and curves. In Fig. 3b, the blue data should be green, referring to a thickness of ‘3.5 nm’, and the green data should be blue, referring to a thickness of ‘8 nm’.

Date: 2016
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DOI: 10.1038/ncomms10428

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