Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
Woo Young Kim,
Hyeon-Don Kim,
Teun-Teun Kim,
Hyun-Sung Park,
Kanghee Lee,
Hyun Joo Choi,
Seung Hoon Lee,
Jaehyeon Son,
Namkyoo Park and
Bumki Min ()
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Woo Young Kim: Korea Advanced Institute of Science and Technology(KAIST)
Hyeon-Don Kim: Korea Advanced Institute of Science and Technology(KAIST)
Teun-Teun Kim: Korea Advanced Institute of Science and Technology(KAIST)
Hyun-Sung Park: Korea Advanced Institute of Science and Technology(KAIST)
Kanghee Lee: Korea Advanced Institute of Science and Technology(KAIST)
Hyun Joo Choi: Korea Advanced Institute of Science and Technology(KAIST)
Seung Hoon Lee: Korea Advanced Institute of Science and Technology(KAIST)
Jaehyeon Son: Korea Advanced Institute of Science and Technology(KAIST)
Namkyoo Park: Photonic Systems Laboratory, School of EECS, Seoul National University
Bumki Min: Korea Advanced Institute of Science and Technology(KAIST)
Nature Communications, 2016, vol. 7, issue 1, 1-6
Abstract:
Abstract Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.
Date: 2016
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms10429
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DOI: 10.1038/ncomms10429
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