Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

Doohee Cho, Sangmo Cheon, Ki-Seok Kim, Sung-Hoon Lee, Yong-Heum Cho, Sang-Wook Cheong and Han Woong Yeom ()
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Doohee Cho: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS)
Sangmo Cheon: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS)
Ki-Seok Kim: Pohang University of Science and Technology (POSTECH)
Sung-Hoon Lee: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS)
Yong-Heum Cho: Pohang University of Science and Technology (POSTECH)
Sang-Wook Cheong: Laboratory for Pohang Emergent Materials and Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology
Han Woong Yeom: Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS)

Nature Communications, 2016, vol. 7, issue 1, 1-6

Abstract: Abstract The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.

Date: 2016
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DOI: 10.1038/ncomms10453

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