Direct growth of single-crystalline III–V semiconductors on amorphous substrates

Kevin Chen, Rehan Kapadia, Audrey Harker, Sujay Desai, Jeong Seuk Kang, Steven Chuang, Mahmut Tosun, Carolin M. Sutter-Fella, Michael Tsang, Yuping Zeng, Daisuke Kiriya, Jubin Hazra, Surabhi Rao Madhvapathy, Mark Hettick, Yu-Ze Chen, James Mastandrea, Matin Amani, Stefano Cabrini, Yu-Lun Chueh, Joel W. Ager, Daryl C. Chrzan and Ali Javey ()
Additional contact information
Kevin Chen: University of California
Rehan Kapadia: University of California
Audrey Harker: Lawrence Berkeley National Laboratory
Sujay Desai: University of California
Jeong Seuk Kang: University of California
Steven Chuang: University of California
Mahmut Tosun: University of California
Carolin M. Sutter-Fella: University of California
Michael Tsang: University of California
Yuping Zeng: University of California
Daisuke Kiriya: University of California
Jubin Hazra: University of Southern California
Surabhi Rao Madhvapathy: University of California
Mark Hettick: University of California
Yu-Ze Chen: National Tsing Hua University
James Mastandrea: Lawrence Berkeley National Laboratory
Matin Amani: University of California
Stefano Cabrini: Molecular Foundry, Lawrence Berkeley National Laboratory
Yu-Lun Chueh: National Tsing Hua University
Joel W. Ager: Lawrence Berkeley National Laboratory
Daryl C. Chrzan: Lawrence Berkeley National Laboratory
Ali Javey: University of California

Nature Communications, 2016, vol. 7, issue 1, 1-6

Abstract: Abstract The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III–V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III–V’s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III–V’s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III–V’s on application-specific substrates by direct growth.

Date: 2016
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DOI: 10.1038/ncomms10502

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