Ultra-high gain diffusion-driven organic transistor

Fabrizio Torricelli (), Luigi Colalongo, Daniele Raiteri, Zsolt Miklós Kovács-Vajna and Eugenio Cantatore
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Fabrizio Torricelli: University of Brescia
Luigi Colalongo: University of Brescia
Daniele Raiteri: Eindhoven University of Technology, Groene Loper 19
Zsolt Miklós Kovács-Vajna: University of Brescia
Eugenio Cantatore: Eindhoven University of Technology, Groene Loper 19

Nature Communications, 2016, vol. 7, issue 1, 1-9

Abstract: Abstract Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal–semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics.

Date: 2016
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DOI: 10.1038/ncomms10550

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