Arbitrary cross-section SEM-cathodoluminescence imaging of growth sectors and local carrier concentrations within micro-sampled semiconductor nanorods

Kentaro Watanabe (), Takahiro Nagata, Seungjun Oh, Yutaka Wakayama, Takashi Sekiguchi, János Volk and Yoshiaki Nakamura
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Kentaro Watanabe: International Center for Materials Nanoarchitectonics, National Institute for Materials Science
Takahiro Nagata: International Center for Materials Nanoarchitectonics, National Institute for Materials Science
Seungjun Oh: International Center for Materials Nanoarchitectonics, National Institute for Materials Science
Yutaka Wakayama: International Center for Materials Nanoarchitectonics, National Institute for Materials Science
Takashi Sekiguchi: International Center for Materials Nanoarchitectonics, National Institute for Materials Science
János Volk: MTA EK Institute of Technical Physics and Materials Science
Yoshiaki Nakamura: Graduate School of Engineering Science, Osaka University

Nature Communications, 2016, vol. 7, issue 1, 1-9

Abstract: Abstract Future one-dimensional electronics require single-crystalline semiconductor free-standing nanorods grown with uniform electrical properties. However, this is currently unrealistic as each crystallographic plane of a nanorod grows at unique incorporation rates of environmental dopants, which forms axial and lateral growth sectors with different carrier concentrations. Here we propose a series of techniques that micro-sample a free-standing nanorod of interest, fabricate its arbitrary cross-sections by controlling focused ion beam incidence orientation, and visualize its internal carrier concentration map. ZnO nanorods are grown by selective area homoepitaxy in precursor aqueous solution, each of which has a (0001):+c top-plane and six {1–100}:m side-planes. Near-band-edge cathodoluminescence nanospectroscopy evaluates carrier concentration map within a nanorod at high spatial resolution (60 nm) and high sensitivity. It also visualizes +c and m growth sectors at arbitrary nanorod cross-section and history of local transient growth events within each growth sector. Our technique paves the way for well-defined bottom-up nanoelectronics.

Date: 2016
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DOI: 10.1038/ncomms10609

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