Stimulated Raman adiabatic passage in a three-level superconducting circuit

K. S. Kumar, A. Vepsäläinen, S. Danilin and G. S. Paraoanu ()
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K. S. Kumar: Low Temperature Laboratory, Aalto University School of Science
A. Vepsäläinen: Low Temperature Laboratory, Aalto University School of Science
S. Danilin: Low Temperature Laboratory, Aalto University School of Science
G. S. Paraoanu: Low Temperature Laboratory, Aalto University School of Science

Nature Communications, 2016, vol. 7, issue 1, 1-6

Abstract: Abstract The adiabatic manipulation of quantum states is a powerful technique that opened up new directions in quantum engineering—enabling tests of fundamental concepts such as geometrical phases and topological transitions, and holding the promise of alternative models of quantum computation. Here we benchmark the stimulated Raman adiabatic passage for circuit quantum electrodynamics by employing the first three levels of a transmon qubit. In this ladder configuration, we demonstrate a population transfer efficiency >80% between the ground state and the second excited state using two adiabatic Gaussian-shaped control microwave pulses. By doing quantum tomography at successive moments during the Raman pulses, we investigate the transfer of the population in time domain. Furthermore, we show that this protocol can be reversed by applying a third adiabatic pulse, we study a hybrid nondiabatic–adiabatic sequence, and we present experimental results for a quasi-degenerate intermediate level.

Date: 2016
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DOI: 10.1038/ncomms10628

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