Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

Gem Shoute (), Amir Afshar, Triratna Muneshwar, Kenneth Cadien and Douglas Barlage ()
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Gem Shoute: University of Alberta
Amir Afshar: University of Alberta
Triratna Muneshwar: University of Alberta
Kenneth Cadien: University of Alberta
Douglas Barlage: University of Alberta

Nature Communications, 2016, vol. 7, issue 1, 1-5

Abstract: Abstract Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature of these devices. Variations from the n-type field-effect transistor architecture have not been widely investigated as a result of the lack of available p-type wide-bandgap inorganic semiconductors. Here, we present a wide-bandgap metal-oxide n-type semiconductor that is able to sustain a strong p-type inversion layer using a high-dielectric-constant barrier dielectric when sourced with a heterogeneous p-type material. A demonstration of the utility of the inversion layer was also investigated and utilized as the controlling element in a unique tunnelling junction transistor. The resulting electrical performance of this prototype device exhibited among the highest reported current, power and transconductance densities. Further utilization of the p-type inversion layer is critical to unlocking the previously unexplored capability of metal-oxide thin-film transistors, such applications with next-generation display switches, sensors, radio frequency circuits and power converters.

Date: 2016
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DOI: 10.1038/ncomms10632

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