Ferroelastic switching in a layered-perovskite thin film

Chuanshou Wang, Xiaoxing Ke, Jianjun Wang, Renrong Liang, Zhenlin Luo, Yu Tian, Di Yi, Qintong Zhang, Jing Wang, Xiu-Feng Han, Gustaaf Van Tendeloo, Long-Qing Chen, Ce-Wen Nan (), Ramamoorthy Ramesh () and Jinxing Zhang ()
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Chuanshou Wang: Beijing Normal University
Xiaoxing Ke: EMAT (Electron Microscopy for Materials Science), University of Antwerp
Jianjun Wang: State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University
Renrong Liang: Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University
Zhenlin Luo: National Synchrotron Radiation Laboratory and CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China
Yu Tian: Beijing Normal University
Di Yi: University of California
Qintong Zhang: Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Science
Jing Wang: Beijing Normal University
Xiu-Feng Han: Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Science
Gustaaf Van Tendeloo: EMAT (Electron Microscopy for Materials Science), University of Antwerp
Long-Qing Chen: State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University
Ce-Wen Nan: State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University
Ramamoorthy Ramesh: University of California
Jinxing Zhang: Beijing Normal University

Nature Communications, 2016, vol. 7, issue 1, 1-9

Abstract: Abstract A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.

Date: 2016
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DOI: 10.1038/ncomms10636

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