Near-field photocurrent nanoscopy on bare and encapsulated graphene
Achim Woessner,
Pablo Alonso-González,
Mark B. Lundeberg,
Yuanda Gao,
Jose E. Barrios-Vargas,
Gabriele Navickaite,
Qiong Ma,
Davide Janner,
Kenji Watanabe,
Aron W. Cummings,
Takashi Taniguchi,
Valerio Pruneri,
Stephan Roche,
Pablo Jarillo-Herrero,
James Hone,
Rainer Hillenbrand and
Frank H. L. Koppens ()
Additional contact information
Achim Woessner: ICFO—Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology
Pablo Alonso-González: CIC nanoGUNE
Mark B. Lundeberg: ICFO—Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology
Yuanda Gao: Columbia University, New York
Jose E. Barrios-Vargas: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB
Gabriele Navickaite: ICFO—Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology
Qiong Ma: Massachusetts Institute of Technology
Davide Janner: ICFO—Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology
Kenji Watanabe: National Institute for Materials Science
Aron W. Cummings: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB
Takashi Taniguchi: National Institute for Materials Science
Valerio Pruneri: ICFO—Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology
Stephan Roche: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB
Pablo Jarillo-Herrero: Massachusetts Institute of Technology
James Hone: Columbia University, New York
Rainer Hillenbrand: CIC nanoGUNE and UPV/EHU
Frank H. L. Koppens: ICFO—Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology
Nature Communications, 2016, vol. 7, issue 1, 1-7
Abstract:
Abstract Optoelectronic devices utilizing graphene have demonstrated unique capabilities and performances beyond state-of-the-art technologies. However, requirements in terms of device quality and uniformity are demanding. A major roadblock towards high-performance devices are nanoscale variations of the graphene device properties, impacting their macroscopic behaviour. Here we present and apply non-invasive optoelectronic nanoscopy to measure the optical and electronic properties of graphene devices locally. This is achieved by combining scanning near-field infrared nanoscopy with electrical read-out, allowing infrared photocurrent mapping at length scales of tens of nanometres. Using this technique, we study the impact of edges and grain boundaries on the spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can readily be applied to encapsulated graphene devices. We observe charge build-up near the edges and demonstrate a solution to this issue.
Date: 2016
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms10783
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DOI: 10.1038/ncomms10783
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