Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

Wei Jin Hu (), Zhihong Wang, Weili Yu and Tom Wu ()
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Wei Jin Hu: Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST)
Zhihong Wang: Advanced Nanofabrication Core Lab, King Abdullah University of Science and Technology (KAUST)
Weili Yu: Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST)
Tom Wu: Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST)

Nature Communications, 2016, vol. 7, issue 1, 1-9

Abstract: Abstract Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

Date: 2016
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DOI: 10.1038/ncomms10808

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