Surface Landau levels and spin states in bismuth (111) ultrathin films

Hongjian Du, Xia Sun, Xiaogang Liu, Xiaojun Wu, Jufeng Wang, Mingyang Tian, Aidi Zhao, Yi Luo, Jinlong Yang, Bing Wang () and J. G. Hou ()
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Hongjian Du: Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, Key Laboratory of Strong-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China
Xia Sun: Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, Key Laboratory of Strong-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China
Xiaogang Liu: Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, Key Laboratory of Strong-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China
Xiaojun Wu: Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, Key Laboratory of Strong-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China
Jufeng Wang: Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, Key Laboratory of Strong-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China
Mingyang Tian: Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, Key Laboratory of Strong-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China
Aidi Zhao: Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, Key Laboratory of Strong-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China
Yi Luo: Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, Key Laboratory of Strong-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China
Jinlong Yang: Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, Key Laboratory of Strong-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China
Bing Wang: Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, Key Laboratory of Strong-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China
J. G. Hou: Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, Key Laboratory of Strong-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China

Nature Communications, 2016, vol. 7, issue 1, 1-8

Abstract: Abstract The development of next-generation electronics is much dependent on the discovery of materials with exceptional surface-state spin and valley properties. Because of that, bismuth has attracted a renewed interest in recent years. However, despite extensive studies, the intrinsic electronic transport properties of Bi surfaces are largely undetermined due to the strong interference from the bulk. Here we report the unambiguous determination of the surface-state Landau levels in Bi (111) ultrathin films using scanning tunnelling microscopy under magnetic fields perpendicular to the surface. The Landau levels of the electron-like and the hole-like carriers are accurately characterized and well described by the band structure of the Bi (111) surface from density functional theory calculations. Some specific surface spin states with a large g-factor are identified. Our findings shed light on the exploiting surface-state properties of Bi for their applications in spintronics and valleytronics.

Date: 2016
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DOI: 10.1038/ncomms10814

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