Lasing in silicon–organic hybrid waveguides

Dietmar Korn, Matthias Lauermann, Sebastian Koeber, Patrick Appel, Luca Alloatti, Robert Palmer, Pieter Dumon, Wolfgang Freude, Juerg Leuthold and Christian Koos ()
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Dietmar Korn: Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT)
Matthias Lauermann: Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT)
Sebastian Koeber: Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT)
Patrick Appel: Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT)
Luca Alloatti: Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT)
Robert Palmer: Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT)
Pieter Dumon: IMEC
Wolfgang Freude: Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT)
Juerg Leuthold: Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT)
Christian Koos: Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT)

Nature Communications, 2016, vol. 7, issue 1, 1-9

Abstract: Abstract Silicon photonics enables large-scale photonic–electronic integration by leveraging highly developed fabrication processes from the microelectronics industry. However, while a rich portfolio of devices has already been demonstrated on the silicon platform, on-chip light sources still remain a key challenge since the indirect bandgap of the material inhibits efficient photon emission and thus impedes lasing. Here we demonstrate a class of infrared lasers that can be fabricated on the silicon-on-insulator (SOI) integration platform. The lasers are based on the silicon–organic hybrid (SOH) integration concept and combine nanophotonic SOI waveguides with dye-doped organic cladding materials that provide optical gain. We demonstrate pulsed room-temperature lasing with on-chip peak output powers of up to 1.1 W at a wavelength of 1,310 nm. The SOH approach enables efficient mass-production of silicon photonic light sources emitting in the near infrared and offers the possibility of tuning the emission wavelength over a wide range by proper choice of dye materials and resonator geometry.

Date: 2016
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DOI: 10.1038/ncomms10864

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