Mobility overestimation due to gated contacts in organic field-effect transistors

Emily G. Bittle (), James I. Basham, Thomas N. Jackson, Oana D. Jurchescu and David J. Gundlach ()
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Emily G. Bittle: National Institute of Standards and Technology
James I. Basham: National Institute of Standards and Technology
Thomas N. Jackson: The Pennsylvania State University
Oana D. Jurchescu: Wake Forest University
David J. Gundlach: National Institute of Standards and Technology

Nature Communications, 2016, vol. 7, issue 1, 1-7

Abstract: Abstract Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more.

Date: 2016
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DOI: 10.1038/ncomms10908

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