Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal
J. J. Seo,
B. Y. Kim,
B. S. Kim,
J. K. Jeong,
J. M. Ok,
Jun Sung Kim,
J. D. Denlinger,
S. -K. Mo,
C. Kim () and
Y. K. Kim ()
Additional contact information
J. J. Seo: Institute of Physics and Applied Physics, Yonsei University
B. Y. Kim: Pohang University of Science and Technology
B. S. Kim: Center for Correlated Electron Systems, Institute for Basic Science
J. K. Jeong: Institute of Physics and Applied Physics, Yonsei University
J. M. Ok: Pohang University of Science and Technology
Jun Sung Kim: Pohang University of Science and Technology
J. D. Denlinger: Advanced Light Source, Lawrence Berkeley National Laboratory
S. -K. Mo: Advanced Light Source, Lawrence Berkeley National Laboratory
C. Kim: Center for Correlated Electron Systems, Institute for Basic Science
Y. K. Kim: Center for Correlated Electron Systems, Institute for Basic Science
Nature Communications, 2016, vol. 7, issue 1, 1-5
Abstract:
Abstract A superconducting transition temperature (Tc) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO3. The discovery ignited efforts to identify the mechanism for the markedly enhanced Tc from its bulk value of 8 K. There are two main views about the origin of the Tc enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO3. Without interfacial effects, the surface layer state has a moderate Tc of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum Tc, which in turn reveals the need for interfacial effects to achieve the highest Tc in one monolayer FeSe on SrTiO3.
Date: 2016
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms11116
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DOI: 10.1038/ncomms11116
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